elektronische bauelemente ssg4910n 10a , 30v , r ds(on) 13.5 m ? dual-n enhancement mode power mosfet 24-oct-2011 rev. b page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. a h b m d c j k f l e n g rohs compliant product a suffix of ?-c? specifies halogen & lead-free description these miniature surface mount mosfets utilize a high cell densit y trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc converters and power management in portable and battery-powered products such as comput ers, printers, pcmcia cards, cellular and cordless telephones. features ? low r ds(on) provides higher efficiency and extends battery life. ? low thermal impedance copper leadframe sop-8 saves board space. ? fast switching speed. ? high performance trench technology. package information package mpq leader size sop-8 2.5k 13 inch maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v t a =25c i d 10 a continuous drain current 1 t a =70c i d 8.2 a pulsed drain current 2 i dm 50 a continuous source current (diode conduction) 1 i s 2.3 a t a =25c p d 2.1 w total power dissipation 1 t a =70c p d 1.3 w operating junction & stor age temperature range t j , t stg -55~150 c thermal resistance ratings maximum junction to case 1 t Q 5 sec r jc 40 c / w maximum junction to ambient 1 t Q 5 sec r ja 60 c / w notes: 1 surface mounted on 1? x 1? fr4 board. 2 pulse width limited by maximum junction temperature. sop-8 millimete r millimete r ref. min. max. ref. min. max. a 5.80 6.20 h 0.35 0.49 b 4.80 5.00 j 0.375 ref. c 3.80 4.00 k 45 d0 8 l 1.35 1.75 e 0.40 0.90 m 0.10 0.25 f 0.19 0.25 n 0.25 ref. g 1.27 typ. g s g s d d d d
elektronische bauelemente ssg4910n 10a , 30v , r ds(on) 13.5 m ? dual-n enhancement mode power mosfet 24-oct-2011 rev. b page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit test condition static drain-source breakdown voltage v (br)dss 30 - - v v gs =0, i d =250 a gate-threshold voltage v gs(th) 1 - - v v ds =v gs , i d =250 a gate-body leakage i gss - - 100 na v ds =0, v gs =20v - - 1 a v ds =24v, v gs =0 zero gate voltage drain current i dss - - 25 a v ds =24v, v gs =0, t j =55c on-state drain current 1 i d(on) 20 - - a v ds =5v, v gs =10v - - 13.5 v gs =10v, i d =10a - 16 20 v gs =4.5v, i d =8a drain-source on-resistance 1 r ds(on) - - 15 m ? v gs =10v, i d =15a, t j =55c forward transconductance 1 g fs - 40 - s v ds =15v, i d =10a diode forward voltage v sd - 0.7 - v i s =2.3a, v gs =0 pulsed source current(bodydiode) 1 i sm - 5 - a dynamic 2 total gate charge q g - 20 - gate-source charge q gs - 7 - gate-drain charge q gd - 7 - nc i d =10a v ds =15v v gs =5v turn-on delay time t d(on) - 20 - rise time t r - 9 - turn-off delay time t d(off) - 70 - fall time t f - 20 - ns v dd =25v i d =1a v gen =10v r l =25 ? notes: 1 pulse test pw 300 s duty cycle 2%. QQ 2 guaranteed by design, not s ubject to production testing.
elektronische bauelemente ssg4910n 10a , 30v , r ds(on) 13.5 m ? dual-n enhancement mode power mosfet 24-oct-2011 rev. b page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristics curve
elektronische bauelemente ssg4910n 10a , 30v , r ds(on) 13.5 m ? dual-n enhancement mode power mosfet 24-oct-2011 rev. b page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristics curve
|
